紀要論文

HYDROGEN ION IMPLANTATION INDUCED LOW RESISTIVE　KNbO_3 LAYER IN BULK SINGLE CRYSTAL

eng

02860201

https://doi.org/10.15002/00030389

法政大学イオンビーム工学研究所

PROCEEDINGS OF THE 34th SYMPOSIUM ON MATERIALS SCIENCE AND ENGINEERING RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY (December 9, 2015)

34

36

41

2016-02

Version of Record

Origins of low resistivity in H-ion implanted KNbO_3 bulk single crystals are studied by elastic recoil detection analysis (ERDA) and Van der Pauw methods. The H-ion implantation (peak ion fluence: 5.0 × 10^15 cm^-2) into KNbO_3 is performed using a 500 keV implanter. The sheet resistance decreases from ～10^8 Ω/□ for an un-implanted KNbO_3 sample to 2.3 × 10^5 Ω/□ for as-implanted and 4.3 × 10^5 Ω/□ for 150℃ annealed samples, respectively. The ERDA experiment using the 1.5 MeV-^4He^+ beam can evaluate hydrogen from the surface to around 60 nm. The hydrogen concentration near the surface estimated is 5.1 × 10^14 cm^-2 for un-implanted KNbO_3 sample, 5.6 × 10^14 cm^-2 for as-implanted, 3.4 × 10^14 cm^-2 for 150℃ annealed samples, respectively, indicating that a part of hydrogen is diffused out by annealing. The low resistive layer induced in H-ion implanted KNbO_3 suggests the existence of a shallow energy level related to the complex defect consisting of hydrogen interstitial and the proton induced defect such as oxygen vacancy.

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