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アイテムタイプ	紀要論文
タイトル	REALIZATION OF P-TYPE CONDUCTIVE LAYER ON TYPE IIA CVD DIAMOND BY B^+ ION IMPLANTATION AT ROOM TEMPERATURE FOLLOWED BY 1150 AND 1300℃ ANNEALING
著者	著者名 Seki, Yuhei
	著者名 Hoshino, Yasushi
	著者名 Nakata, Jyoji
言語	eng
ISSN	02860201
DOI	https://doi.org/10.15002/00030336
出版者	法政大学イオンビーム工学研究所
雑誌名	PROCEEDINGS OF THE 38th SYMPOSIUM ON MATERIALS SCIENCE AND ENGINEERING RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY (December 18, 2019)
巻	38
開始ページ	59
終了ページ	62
発行年	2020-02
著者版フラグ	Version of Record
キーワード	diamond
	ion implantation
抄録	We have investigated the electrical properties of heavily B-doped type IIa diamond introduced by ion implantation at room temperature with a flat impurity concentration of ～200 ppm, followed by thermal annealing at 1150 and 1300℃. We confirmed p-type conductivity and typical activation energy of acceptor B in diamond at wide temperatures range from 173 to 1073 K. The doping efficiency for the sample after the 1150℃ annealing was realized to be 78%, which is the best value ever reported. The Hall mobility around room temperature was realized to be higher than 100 cm^2/Vs. It is consequently revealed that at least room temperature B-implantation followed by above 1150℃ annealing is sufficiently effective for the electrical activation of B doped in high quality diamond.
資源タイプ	Article
インデックス	資料タイプ別 ＞ 紀要 ＞ PROCEEDINGS OF SYMPOSIUM ON MATERIALS SCIENCE AND ENGINEERING RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY
	216 イオンビーム工学研究所 ＞ 紀要 ＞ PROCEEDINGS OF SYMPOSIUM ON MATERIALS SCIENCE AND ENGINEERING RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY ＞ 38

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