学位論文

大出力システム実現のためのパワー半導体デバイスおよび回路技術に関する研究

jpn

https://doi.org/10.15002/00013954

1

164

2017-03-24

Not Applicable (or Unknown)

32675乙第226号

2017-03-24

博士(工学)

主査 教授 安田彰, 副査 教授 栗山一男, 副査 教授 山本康博, 副査 教授 三島友義

The thesis summarizes the power semiconductor device and circuit technologies to realize high power systems. For realizing high power systems, both device technology for high breakdown voltage and circuit design technology to utilize the devices are needed. In power semiconductor devices, because the maximum electric field varies depending on material and device structure, it is indispensable to analyze electric field strength distribution to achieve high breakdown voltage. Then, it is usual that semiconductor devices are designed by applying appropriate electric field relaxation methods, but existing electric field relaxation methods are not sufficient to realize higher breakdown voltage. In the thesis, methodologies to relax maximum electric field for high-k will be described, while applying existing electric field relaxation methods. In the circuit design technology, output voltage range can be extended by changing a source voltage up and down. To vary source voltages, it is necessary to add large size components, which causes increased area for the whole system. In the thesis, a novel circuit configuration which can generate outputs that is higher than source voltage range without changing source voltages. Another techniques needed for digital speaker systems to apply to high output systems will be also presented.

Thesis