紀要論文

HIGH BREAKDOWN VOLTAGE GaN p-n DIODE

eng

02860201

https://doi.org/10.15002/00030391

法政大学イオンビーム工学研究所

PROCEEDINGS OF THE 34th SYMPOSIUM ON MATERIALS SCIENCE AND ENGINEERING RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY (December 9, 2015)

34

46

51

2016-02

Version of Record

GaN p-n diodes

Vertical structured GaN power devices have recently been attracting great interest because of their potential on extremely high power conversion efficiency. This letter describes increased breakdown voltages in vertical GaN p-n diodes fabricated on free-standing GaN substrates. By applying multiple lightly Si doped n-GaN drift layers to the p-n diode, record breakdown voltages (V_B) of 4.7 kV combined with low specific differential on-resistance (R_on) of 1.7 mΩcm^2 were achieved. With reducing the Si-doping concentration of the top n-GaN drift layer adjacent to the p-n junction using well-controlled MOVPE systems, the peak electric field at the p-n junction could be suppressed under high negatively-biased conditions. The second drift layer with a moderate doping concentration contributed to the low R_on. Baliga’s figure of merit (V_B^2/R_on) was 13 GW/cm^2. These are the best values ever reported among those achieved by GaN p-n junction diodes on free-standing GaN substrates.

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