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アイテムタイプ	紀要論文
タイトル	IMPACT OF Mg-ION IMPLANTATION WITH VARIOUS FLUENCE RANGES ON OPTICAL PROPERTIES OF N-TYPE GaN
著者	著者名 Tsuge, Hirofumi
	著者名 Ikeda, Kiyoji
	著者名 Kato, Shigeki
	著者名 Nishimura, Tomoaki
	著者名 Nakamura, Tohru
	著者名 Kuriyama, Kazuo
	著者名 Mishima, Tomoyoshi
言語	eng
ISSN	02860201
DOI	https://doi.org/10.15002/00030377
出版者	法政大学イオンビーム工学研究所
雑誌名	PROCEEDINGS OF THE 35th SYMPOSIUM ON MATERIALS SCIENCE AND ENGINEERING RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY (December 7, 2016)
巻	35
開始ページ	47
終了ページ	52
発行年	2017-02
著者版フラグ	Version of Record
キーワード	GaN
	Mg ion implantation
	free-standing GaN substrate
抄録	Optical characteristics of Mg-ion implanted GaN layers with various fluence ranges were evaluated. Mg ion implantation was performed twice at energies of 30 and 60 keV on n-GaN layers. The first implantation at 30 keV was performed with four different fluence ranges of 1.0×10^14, 5.0×10^14, 1.0×10^15 and 5.0×10^15 cm^-2. The second implantation at an energy of 60 keV was performed with a fluence of 6.5×10^13 cm^-2. After implantation, samples were annealed at 1250℃ for 1 min under N_2 atmosphere. Photoluminescence (PL) spectrum of the GaN layer with the Mg ion implantation at the fluence range of 1.0×10^14 cm^-2 at 30 keV was similar to the one of Mg-doped p-GaN layers grown by MOVPE (Metal-Organic Vapor Phase Epitaxy) on free-standing GaN substrates and those at the fluence ranges over 1.0×10^15 cm^-2 were largely degraded.
資源タイプ	Article
インデックス	資料タイプ別 ＞ 紀要 ＞ PROCEEDINGS OF SYMPOSIUM ON MATERIALS SCIENCE AND ENGINEERING RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY
	216 イオンビーム工学研究所 ＞ 紀要 ＞ PROCEEDINGS OF SYMPOSIUM ON MATERIALS SCIENCE AND ENGINEERING RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY ＞ 35

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