紀要論文

ION BEAM INDUCED INTERFACIAL AMORPHIZATION IN SiGe

eng

02860201

https://doi.org/10.15002/00030373

法政大学イオンビーム工学研究所

PROCEEDINGS OF THE 35th SYMPOSIUM ON MATERIALS SCIENCE AND ENGINEERING RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY (December 7, 2016)

35

25

30

2017-02

Version of Record

The surface region of 400 nm thick SiGe/Si containing 10% Ge was amorphized to the depth of 230 nm by Ge ion bomardment to a fluence of 1.0 × 10^15 ions/cm^2 at the energy of 200 KeV at room temperature. Some samples were annealed in a N_2 atomosphere at 300℃ for 10 min. Then the samples were bombarded with Ge ions at the energy of 3.9 MeV to fluences of 4 × 10^14, 7 × 10^14 and 9 × 10^14 ions/cm^2 at room temperature. Rutherford backscattering spectrometry (RBS) measurements revealed that as the fluence increased the a/c interface between amorphous and crystal proceeded toward internal of the sample, indicating a layer-by-layer movement of the interface. The thickness of amorphous layer of the sample without annealing increased as 7.79 nm / 10^14 ions/cm^2 in contrast to the sample with annealing 4.82 nm / 10^14 ions/cm^2, representing more rapid interface movement in the sample without annealing.

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