紀要論文

5.0 kV BREAKDOWN-VOLTAGE VERTICAL GaN p-n JUNCTION DIODES

eng

02860201

https://doi.org/10.15002/00030357

法政大学イオンビーム工学研究所

PROCEEDINGS OF THE 36th SYMPOSIUM ON MATERIALS SCIENCE AND ENGINEERING RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY (December 13, 2017)

36

33

38

2018-02

Version of Record

A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p-n junction diodes by our newly developed guard-ring structures. Resistance device was inserted between the main diode portion and the guard-ring portion in a ring shaped p-n diode to generate a voltage drop over the resistance device by leakage current flowing the guard-ring portion under negatively biased conditions before the breakdown. The voltage at the outer mesa edge of the guard ring portion where the electric field intensity become highest and the destructive breakdown usually occurs decreases by the voltage drop occurs, so that the electric field concentration in the portion has been relaxed. By adopting this structure, the breakdown voltage (V_B) has been raised by a few hundred volts. With combining a measured low on-resistance (R_on) of 1.25 mΩcm^2, Baliga’s figure of merit (V_B^2/R_on) was as high as 20 GW/cm^2.

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