紀要論文

THE EPITAXIAL GROWTH OF AMORPHOUS Si LAYER DEPOSITED ON HYDROGEN-TERMINATED SURFACES USING ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION WITH ION BEAM MIXING

eng

02860201

https://doi.org/10.15002/00030350

法政大学イオンビーム工学研究所

PROCEEDINGS OF THE 37th SYMPOSIUM ON MATERIALS SCIENCE AND ENGINEERING RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY (December 5, 2018)

37

71

74

2019-02

Version of Record

We have investigated the crystallization process of an amorphous Si (a-Si) layer deposited on hydrogen-terminated Si(001) surfaces by ion beam induced epitaxial crystallization (IBIEC) combined with ion beam mixing (IBMX) aiming at the clarification of the substitutional IBMX effect on the crystallization process. We firstly deposited a-Si layer on two kinds of hydrogen-terminated Si(001) surfaces of dihydride (DH) and monohydride (MH), and then carried out the IBMX by 10-keV Si^+ ion irradiation with a fluence of 1×10^15 ions cm^-2 at room temperature near the amorphous/crystalline interface followed by the IBIEC treatment by 180-keV Ar^+ ion irradiation with a fluence of 1×10^16 ions cm^-2 at 300 and 500℃. The crystallization rate of a-Si layer was analyzed by Rutherford backscattering spectrometry with 2.56 MeV ^10B^2+ projectiles under the [001]-aligned geometry. As a result, the a-Si formed on the hydride surfaces with IBMX treatment was crystallized by IBIEC at 500℃, regardless of the amount of interfacial hydrogen. Consequently, we suggest that the IBIEC combined with IBMX treatment makes it possible to epitaxial crystallize at significantly low temperature for amorphous layer on hardly crystallized structure.

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