紀要論文

反応性 RF スパッタ法により形成した Pr+Ce 酸化膜の構造

jpn

21879923

https://doi.org/10.15002/00014171

法政大学大学院理工学・工学研究科

58

1

4

2017-03-31

Version of Record

ヘッダー部分に誤記 ; (誤) 法政大学大学院理工学・工学研究科紀要 (正) 法政大学大学院紀要. 理工学・工学研究科編

Praseodymium+Cerium oxide films were fabricated on p-type Si (100) substrates by the reactive RF magnetron co-sputtering with a metal Pr target and a sintered CeO2 target in Ar + 10 % O2. Deposited films were post-annealed in an ambient of N2 for 30 minutes at temperatures of 300, 500 and 800°C. In the case of Pr oxide deposition, the films was not deposited on the substrate set at the centered position with respect to the sputtering cathode and the phase transition occurred from cubic PrO2 to hexagonal Pr2O3 after annealing at 800°C. In the contrary case of Pr+Ce oxide deposition, the films was deposited on the substrate set at the centered position with respect to the sputtering and the phase transition did not occur. Key Words : praseodymium, cerium, high-k, sputter, silicate

Article

AA12677220