紀要論文

イオン注入GaN MISFETの高性能化に関する研究

THE CHARACTERISTICS IMPROVEMENT OF SI ION-CHARACTED GAN MISFETS

jpn

21879923

https://doi.org/10.15002/00010401

法政大学大学院理工学・工学研究科

55

1

4

2014-03-24

Version of Record

This paper describes characteristics of Mo gate ion-implanted GaN MISFETs with normally-off operation. Normally-off GaN MISFETs were made by utilizing self-alignment process using ion implantation technologies. The self-aligned structures enable us to reduce source and drain parasitic resistance, which improves the device characteristics. Maximum drain current and maximum transconductance for the self-aligned Mo gate GaN MISFETs on sapphire substrate were 22 mA/mm and 3.5 mS/mm, respectively. And threshold voltage of +0.4 V were obtained for the devices. The Mo gate GaN MISFETs were also fabricated on free-standing GaN substrates with high crystalline quality. Cut-off frequency of 1.1 GHz was obtained for the MISFETs. The metal gate with low resistivity enables us to elevate annealing temperature up to 1200 oC, which improves the DC and RF characteristics considerably. The positive threshold voltage and high drain current show the potentials and advantages of GaN MISFETs for high voltage, current applications.

Article

AA12677220